The formation of ordered structures in InGaN layers

We investigated atomic ordering in InxGa1−xN layers for x between 0.03 and 0.28 using transmission electron microscopy. We demonstrate that {1 0 −1 1} facets play a role in 1:1 ordering. Deviations in composition from x = 0.5 are accommodated by the formation of small ordered regions embedded in a short-range ordered or disordered matrix.