کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1504197 1510975 2015 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Crystallography, semiconductivity, thermoelectricity, and other properties of boron and its compounds, especially B6O
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Crystallography, semiconductivity, thermoelectricity, and other properties of boron and its compounds, especially B6O
چکیده انگلیسی


• Thermoelectric properties to 1200 °C estimated for β-boron, BxC, and BxO.
• B12O2 looks interesting, worth more study.
• Boron carbide can be doped up to 20 atom% carbon to eliminate electron trapping.
• Beta-boron can be doped with carbon donors up to 8.5 atom% carbon.
• Carbon in β-boron may produce B10C2 icosahedra.

Electron deficient and non-deficient boron compounds are discussed as potential thermoelectric generator materials. Particular attention is paid to carbon-doped beta-boron, high-carbon boron carbide, and the alpha-boron derivative compound boron suboxide. Stoichiometric B6O shows some promise, and may have a higher ZT than the other two compounds. Carbon saturated beta-boron appears to have a higher ZT than undoped samples. Carbon saturated boron carbide at B12C3 does exist. Its thermoelectric behavior is unknown.

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ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Sciences - Volume 47, September 2015, Pages 43–50
نویسندگان
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