Preillumination – Induced change of electronic transport properties of TlGaSe2 semiconductor

• The effect of the preillumination on transport properties of TlGaSe2 was investigated.
• Results are discussed on the basis of the Staebler–Wronski effect.
• The Staebler–Wronski effect is detected in bulk TlGaSe2 single semiconductor.
• TlGaSe2 single crystal has properties that are typical to the amorphous semiconductors.

The effect of the preillumination on the dark and the photo-conductivity of the TlGaSe2 layered semiconductor is investigated within the temperature range of 80–300 K. After the illumination predominantly at high temperatures, a substantial decrease in both dark and photo-conductivities was observed. Observed phenomena resemble the Staebler–Wronski effect, which is typical for the amorphous semiconductors. The main contribution of this work is to show that the TlGaSe2 single crystals with well apparent crystalline structure can demonstrate certain characteristics peculiar to amorphous semiconductors.

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