Photoconductivity and photo-detecting properties of vacuum deposited ZnSe thin films

The paper reports the detailed analysis of photoconductivity and photo-detecting properties of vacuum deposited zinc selenide (ZnSe) thin films. The vacuum deposited ZnSe films were found to have high absorption coefficient and showed peak photo-response at 460 nm. The photocurrent and photo-response time of the films were measured as a function of substrate temperature and annealing conditions. Considerable increase in photocurrent and much faster photo-response was observed in films deposited at high substrate temperatures. Annealing at moderate temperatures also improved the photoconductivity and response time of the films.

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► ZnSe films were deposited by cost effective vacuum deposition method.
► The peak photo-response was observed at 460 nm.
► Photocurrent increased with the increase in substrate temperature and also after annealing.
► Both rise and decay times decreased with increase in substrate temperature and also after annealing.
► The optimum conditions for obtaining high photocurrent and fast photo-response have been determined.