Light-emitting diodes composed of n-ZnO and p-Si nanowires constructed on plastic substrates by dielectrophoresis

► Light-emitting diodes (LEDs) composed of n-ZnO and p-Si nanowires (NWs) are constructed on flexible plastic substrates. ► ZnO NWs are aligned between electrodes and crossed with a single Si NW by dielectrophoresis. ► The number of aligned ZnO NWs determines the electroluminescence (EL) intensities in the LEDs. ► The EL characteristics are stable during bending tests.