Ferroelectric and ferromagnetic properties of Bi0.85Eu0.15FeO3 thin films prepared by sol–gel method

Bi0.85Eu0.15FeO3 (BEuF) thin films were prepared on Pt/Ti/SiO2/Si substrates by a sol–gel method. The effect of annealing temperature on crystallization, ferroelectric, dielectric and ferromagnetic properties was investigated. The single-phase BEuF thin films were obtained at annealing temperature of 490–600 °C. BEuF film annealed at 550 °C for 50 min showed the improved properties with dielectric constant (ɛr) of 80 (at 1 MHz), saturation magnetization (Ms) of 26.2 emu/cm3 and remanent polarization (2Pr) of 65.6 μC/cm2.

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