کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1505510 993765 2010 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Ab initio study on the structural and electronic properties of Li3GaP2 compared with Li3GaN2
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Ab initio study on the structural and electronic properties of Li3GaP2 compared with Li3GaN2
چکیده انگلیسی

Structural and electronic properties of Li3GaP2 and Li3GaN2 have been investigated by the first-principles calculations within the density functional theory. The calculated lattice parameters of the two compounds are in excellent agreement with the available experimental data. Both Li3GaP2 and Li3GaN2 are direct band gap semiconductors with the band gaps of 1.26 eV and 2.37 eV, respectively. The Ga–P (Ga–N) and Li–P bonds consist of a mixture of ionic character and covalent nature, while the Li–N bond exhibits almost ionic. The bonds in the Li3GaP2 are shown to have stronger covalency and weaker ionicity as compared to the corresponding ones in the Li3GaN2.

Figure optionsDownload as PowerPoint slide

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Sciences - Volume 12, Issue 7, July 2010, Pages 1080–1083
نویسندگان
, , , ,