کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1505752 993772 2010 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Amorphous structure and electronic properties of the Ge1Sb2Te4 phase change material
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Amorphous structure and electronic properties of the Ge1Sb2Te4 phase change material
چکیده انگلیسی

Ge1Sb2Te4 is one of the most commonly used phase change materials, due to the large optical and electrical contrast between a metastable crystalline phase and the amorphous phase. We use ab initio molecular dynamics to generate an amorphous Ge1Sb2Te4 structure. By analysing the distance distributions, we show that the structure can be analysed in terms of 21% of tetrahedrally coordinated Ge atoms and 79% of 3-fold Ge atoms. These are involved in distorted octahedral shells with bond length correlations that are similar to the a-GeTe structure as a consequence of a Peierls-distortion. The electronic properties are shown to be in reasonable agreement with the experiment with an electronic gap of 0.45 eV with. The optical conductivity curve is also in agreement with the experiment, with a maximal conductivity at an energy of ∼3 eV.

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ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Sciences - Volume 12, Issue 2, February 2010, Pages 193–198
نویسندگان
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