کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1506417 | 993793 | 2008 | 6 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Spin transport and spin current detection in semiconductors Spin transport and spin current detection in semiconductors](/preview/png/1506417.png)
We consider a semiconductor device similar to the subject of recent experiments on the spin-dependent Hall effect and analyse electric field effects in spin transport. A drift–diffusion equation for spin density is derived, and drift and diffusion contributions to the spin current are examined, which importantly suggests a possible way for the enhancement of spin current by using a semiconductor degenerate regime. By referring to the experimental detection technique, an expression for the transverse Hall field arising from the spin current is derived, whose exponential dependence on distance at electric fields near E≃EcoE≃Eco can also be used as a convenient and useful tool to determine the spin diffusion length of a semiconductor. The results are discussed and are compared with published experimental data.
The spin-dependent Hall voltage has two current contributions: drift and diffusion currents. A possible way for the enhancement of spin current or the effect is to use a degenerate regime.Figure optionsDownload as PowerPoint slide
Journal: Solid State Sciences - Volume 10, Issue 2, February 2008, Pages 205–210