کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1506701 | 993805 | 2008 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Thin film engineering for N@C60 quantum computers: Spin detection and device patterning approaches
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Thin film engineering for N@C60 quantum computers: Spin detection and device patterning approaches Thin film engineering for N@C60 quantum computers: Spin detection and device patterning approaches](/preview/png/1506701.png)
چکیده انگلیسی
Using pulsed electrically detected magnetic resonance (p-EDMR), we measured the coherent spin evolution of about 10,000 paramagnetic states in C60 fullerene thin films, opening a way to study potentially single-qubit read-out mechanisms of N@C60 molecules. The N@C60 compatible, low-temperature method of spray-deposition of fullerenes on silicon substrates pre-patterned by local anodic oxidation is shown to yield fullerene structures on the 10 nm scale, still somewhat too coarse for quantum register structures, but suitable for further steps in the application of the p-EDMR method to N@C60.
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ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Sciences - Volume 10, Issue 10, October 2008, Pages 1314–1321
Journal: Solid State Sciences - Volume 10, Issue 10, October 2008, Pages 1314–1321
نویسندگان
Sebastian Schaefer, Kati Huebener, Wolfgang Harneit, Christoph Boehme, Konstantinos Fostiropoulos, Heike Angermann, Jörg Rappich, Jan Behrends, Klaus Lips,