کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1512616 | 1511197 | 2013 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Relationships between Diffusion Parameters and Phosphorus Precipitation during the POCl3 Diffusion Process
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی انرژی
انرژی (عمومی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
The POCl3 diffusion process is still a common way to create the pn-junction of Si solar cells. Concerning the screen- printing process, it is necessary to find a compromise between low emitter recombination, low contact resistance and high lateral conductivity. The formation of a homogeneous emitter during the POCl3 diffusion process depends on several diffusion parameters, including duration, temperature and gas flow. This primarily controls the growth of the highly doped phosphosilicate glass (PSG) layer, which acts as a dopant source during the diffusion process. Detailed investigations of the PSG layer have shown a distinct correlation between the process gas flows and the composition of the PSG layer. Specifically, in this research we examine the influence of phosphorus precipitation at the PSG/Si interface. Furthermore, we show the influence of phosphorus precipitation during the pre-deposition phase on the passivation quality of the corresponding emitter. In a second step, we use the results to create emitters with a reduced density of phosphorus precipitates. In a last step, the optimized emitter structure was transferred to screen-printed solar cell processes, whereby efficiencies up to 19.4%abs. were achieved on monocrystalline p-type Cz material with full area Al-BSF rear side.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Energy Procedia - Volume 38, 2013, Pages 254-262
Journal: Energy Procedia - Volume 38, 2013, Pages 254-262
نویسندگان
Amir Dastgheib-Shirazi, Michael Steyer, Gabriel Micard, Hannes Wagner, Pietro P. Altermatt, Giso Hahn,