کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1515458 | 1511522 | 2015 | 6 صفحه PDF | دانلود رایگان |

• Structure of AlSb2Te3 film was studied by experiments and theoretical calculations.
• Al substitute Sb or Te atoms without spoiling Sb2Te3 structure at smaller content.
• Higher dopant concentration of Al might lead to phase separation.
• We analysis the effect of Al content on phase stability mechanism of AlSb2Te3.
Local structure of AlSb2Te3 thin film was studied by experiments and theoretical calculations. Results show that both Sb and Te atoms are likely to be replaced by Al to form Al–Sb and Al–Te covalent bonds. At a smaller dopant concentration, Al atoms presumably incorporate into Sb2Te3 matrix by substitute Sb or Te atoms without spoiling its structural unit. Compared together with other reported data, for Al doping Sb2Te3 PCM material, optimizing Al content is a key criteria for its phase stability and electric performance.
Journal: Journal of Physics and Chemistry of Solids - Volume 83, August 2015, Pages 52–57