کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1515507 | 1511517 | 2016 | 18 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Thermal diffusivity and 3D-XY critical behavior of ferroelectric semiconductors (PbxSn1âx)2P2Se6
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
An ac photopyroelectric calorimeter has been used to study the thermal diffusivity of the ferroelectric semiconductors family (PbxSn1âx)2P2Se6 (x=0-1) from 30 K to room temperature. Phase transitions have been found for x=0, 0.05, 0.2, 0.47 but not for x=1 in the full temperature range. A continuous phase transition has been found for x=0, 0.05, 0.2 and 0.47 which corresponds to the paraelectric commensurate to incommensurate phase. It has been possible to study the critical behavior of this transition for x=0, 0.05 and the critical parameters obtained have been α=â0.019, A+/Aâ=1.00 and α=â0.026, A+/Aâ=1.03, respectively, having fitted at the same time both the low and high temperature branches of the transition as rigorous critical theory indicates; these results agree with the theoretical prediction from renormalization group theory that this kind of transition complies with the 3D-XY universality class (αtheor=â0.014, A+/Aâ=1.06), which has been experimentally confirmed only in a few materials. A first order incommensurate to ferroelectric phase transition has been characterized in x=0, 0.05 at lower temperature.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Physics and Chemistry of Solids - Volume 88, January 2016, Pages 78-84
Journal: Journal of Physics and Chemistry of Solids - Volume 88, January 2016, Pages 78-84
نویسندگان
V. Shvalya, A. Oleaga, A. Salazar, A.A. Kohutych, Yu.M. Vysochanskii,