Determination of trapping parameters of thermoluminescent glow peaks of semiconducting Tl2Ga2S3Se crystals

• TL experiments were performed on Tl2Ga2S3Se in the temperature range of 280–770 K.
• TL glow curve exhibited two peaks with maximum temperatures of ~373 and 478 K.
• Analysis resulted with activation energies of 780 and 950 meV for revealed traps.
• Dose dependence of the TL intensity was investigated.

Thermoluminescence (TL) properties of Tl2Ga2S3Se layered single crystals were researched in the temperature range of 290–770 K. TL glow curve exhibited two peaks with maximum temperatures of ~373 and 478 K. Curve fitting, initial rise and peak shape methods were used to determine the activation energies of the trapping centers associated with these peaks. Applied methods were in good agreement with the energies of 780 and 950 meV. Capture cross sections and attempt-to-escape frequencies of the trapping centers were reported. An energy level diagram showing transitions in the band gap of the crystal was plotted under the light of the results of the present work and previously reported papers on photoluminescence, thermoluminescence and thermally stimulated current measurements carried out below room temperature.

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