Field-effect switching in nano-graphite films

• The effect of electrical resistivity switching in nano-graphite (NG) films is described.
• Switching occurs from stable high conductive to metastable low conductive state.
• Critical current of switching varies in the range 10–500 mA.
• Possible mechanisms of switching phenomenon in nano-graphite films are discussed.

The effect of electrical resistivity switching in nano-graphite films is described. In difference with cases published elsewhere the switching in nano-graphite films occurs from stable high conductive to metastable low conductive state. Critical current of switching varies in the range 10–500 mA and is believed to increase up to values of 100–1000 A appropriate for using of nano-graphite samples in power grids as contact-less current limiters and circuit breakers. The possible mechanisms of switching phenomenon in nano-graphite films are discussed.