Weak localization and electron–electron scattering in fluorine-doped SnO2 random nanobelt thin films

• We grew high crystalline quality fluorine-doped tin oxide nanobelts.
• The presence of negative temperature coefficient resistance was observed.
• The weak localization in a weak disorder regime was observed and studied.
• Electron scattering by electrons and boundaries were observed as dephasing mechanisms.

Electronic properties of self-assembled high crystalline quality fluorine-doped tin oxide (FTO) nanobelts were studied. We report the experimental transport data of a thin film made using a dispersion of these single-crystal nanobelts. We have shown that the theory of weak localization in a weak disorder regime provides a reasonable description of the observed electrons’ transport characteristics of fluorine doped tin oxide nanobelts thin films. Also, our results suggest that the macroscopic extrinsic disorder, related to the random distribution of nanobelts, does not give a noticeable contribution to the whole transport mechanism.

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