کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1515969 | 1511559 | 2012 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Strain-tunable band gap in graphene/h-BN hetero-bilayer Strain-tunable band gap in graphene/h-BN hetero-bilayer](/preview/png/1515969.png)
Using full-potential density functional calculations within local density approximation (LDA), we predict that mechanically tunable band-gap and quasi-particle-effective-mass are realizable in graphene/hexagonal-BN hetero-bilayer (C/h-BN HBL) by application of in-plane homogeneous biaxial strain. While providing one of the possible reasons for the experimentally observed gap-less pristine-graphene-like electronic properties of C/h-BN HBL, which theoretically has a narrow band-gap, we suggest a schematic experiment for verification of our results which may find applications in nano-electromechanical systems (NEMS), nano opto-mechanical systems (NOMS) and other nano-devices based on C/h-BN HBL.
► We report ab initio study on strained graphene/h-BN hetero-bilayer (C/h-BN HBL).
► Fermi-velocities in graphene and narrow-gapped C/h-BN HBL are found identical.
► C/h-BN HBL shows band gap, Fermi velocity and effective masses all tunable by strain.
► A schematic experimental set-up for verification of these results is proposed.
► The results may find applications in graphene-based NEMS and other nano-devices.
Journal: Journal of Physics and Chemistry of Solids - Volume 73, Issue 7, July 2012, Pages 818–821