Effect of dispersion degree of orientation on dielectric properties of (100)-oriented PST thin film

• (100) Oriented (PbxSr1−x)TiO3 thin film is prepared on the randomly substrate.
• The permittivity of the thin film is 3–6 times higher than that of randomly one.
• The tunability of the thin film is 60% higher than that of randomly one.
• The figure of merit of the thin film is 1 times higher than that of randomly one.
• Contribution of the orientation degree to dielectric properties is revealed.

(100) Oriented (PbxSr1−x)TiO3 (PST) thin films were prepared on indium tin oxide coated glass substrates by sol–gel technique with rapid thermal processing. The dielectric permittivity and tunability of the thin films with different dispersion degrees of orientation were investigated in detail by characterizing the full width at half maximum of their (100) peak based on rocking curves at different annealing temperatures. Influence of orientation dispersion on dielectric properties was exhibited in the tunable dielectric thin films. It shows that the dielectric constant and hence the tunability of the sol–gel derived PST thin films are improved with the decrease in the dispersion degree of orientation of the perovskite phase other than the increase in the content of crystalline phase in the thin films. The dielectric constant (capacitance) and figure of merit of the oriented thin films are 3–6 times and 1 times higher than that of randomly oriented thin film respectively.

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