Optoelectrical and magnetic characteristics of Mn doped Zn1−xSnxO nanorods

This paper describes a new method of fabricating Mn doped Zn1−xSnxO nanorod arrays on a silicon (111) substrate. The proposed method is a gold catalytic vapor–liquid–solid mechanism in a multi-layer deposition process using nanosphere lithographic patterning. Each step of the growth process was monitored using atomic force microscopy to ensure uniformity in the patterns and nanorods. The crystal structure and characteristics of the Mn doped Zn1−xSnxO nanaorods were determined using the X-ray diffraction analysis, scanning electron microscopy, high resolution transmission electron microscopy, and electron diffraction patterns corresponding to the selected area. The lattice constant along the Z-axis was calculated from the indexed pattern, as approximately 5.1 Å. This differs slightly from what was expected for undoped ZnO nanorods. Energy dispersive X-ray spectrometry provided information related to the chemistry of the ZnO nanorods and electro-optical properties at 363 nm were determined from photoluminescence emissions. Using conductive AFM, the band gap for single doped-ZnO nanorods was determined to be 3–3.45 eV. The magnetic properties were characterized by the measurement of a hysteresis loop. This investigation demonstrates the outstanding potential of patterned Mn doped Zn1−xSnxO nanorods for applications requiring dilute magnetic semiconductors in the future.

► Zn1−xSnxO nanorods were fabricated on Si with VLS mechanism in MLD process.
► The band gap of single doped-ZnO nanorods was determined by C-AFM to be 3–3.45 eV.
► Mn doped Zn1−xSnxO nanorods have superior UV emissions at 363 nm peak.
► The character of Mn doped Zn1−xSnxO nanorods presents the applicability in DMS.