Influence of B2O3 on microstructure and microwave dielectric properties of 0.4Nd(Mg0.4Zn0.1Sn0.5)O3–0.6Ca0.8Sr0.2TiO3 ceramic system

The effects of B2O3 on the microstructure and microwave dielectric properties of the 0.4Nd(Mg0.4Zn0.1Sn0.5)O3–0.6Ca0.8Sr0.2TiO3 ceramic system were investigated with a view to their use in microwave devices. A B2O3-doped 0.4Nd(Mg0.4Zn0.1Sn0.5)O3–0.6Ca0.8Sr0.2TiO3 ceramic system was prepared by the conventional solid-state method. The X-ray diffraction patterns of the B2O3-doped 0.4Nd(Mg0.4Zn0.1Sn0.5)O3–0.6Ca0.8Sr0.2TiO3 ceramic system did not significantly vary with sintering temperature. A 0.5 wt% B2O3-doped 0.4Nd(Mg0.4Zn0.1Sn0.5)O3–0.6Ca0.8Sr0.2TiO3 ceramic system that was sintered at 1350 °C for 4 h had a dielectric constant of 38.3, a quality factor Qf of 35,000 GHz, and a temperature coefficient of resonant frequency of −4.8 ppm/°C.

► 4NMZSCST ceramic system sintered at 1350 °C for 4 h had a dielectric constant of 38.3.
► 4NMZSCST ceramic system sintered at 1350 °C for 4 h had a Qf of 35,000 GHz.
► 4NMZSCST ceramic system sintered at 1350 °C for 4 h had a τfτf of −4.8 ppm/°C.