La0.7Sr0.3MnO3 film prepared by dc sputtering on silicon substrate: Effect of working pressure

La0.7Sr0.3MnO3 films were prepared by dc sputtering on Si (100) substrate at different working pressure. The possibility of controlling the magnetic and transport properties of colossal magnetoresistance film is investigated, which has attracted great research interest for practical application. The as-grown film shows different magnetic, transport and magnetoresistance change at different working pressure at room temperature, which is quite attractive from technological point of view. Maximum magnetoresistance (MR) of −5.56%, Curie temperature (Tc) of 325 K and metal insulator transition temperature (TMI) of 278 K was achieved at room temperature.

► La0.7Sr0.3MnO3 (LSMO) film was prepared by dc sputtering.
► Film was grown on silicon substrate without buffer layer.
► Maximum Curie temperature (Tc) of 325 K was achieved at room temperature.
► This shows LSMO is a promising material for spintronics device.