N-methylpyrrolidine-based precursors for chemical vapor deposition of GaNx particles

► Gallium metalorganic (MO) precursors were prepared with N-methylpyrrolidine. ► The MO synthesis was succeeded under mild conditions. ► The precursors reacted with ammonia and formed non-stoichiometric GaNx particles. ► GaNx depositions occurred between 400 and 700 °C, which is a low growth temperature.