کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1516696 | 1511585 | 2010 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Tunneling in 2-D quantum dots via quantum adiabatic switching route
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
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چکیده انگلیسی
We explore the phenomenon of tunneling in single carrier 2-D quantum dot by quantum adiabatic switching route. The confinement in the y-direction is kept harmonic which ensures that tunneling is allowed only along the x-direction. The harmonic confinement potential is kept fixed and a constant external magnetic field is applied along the z-direction. The growth of probability density in the classically forbidden zones and tunneling current are monitored critically which reveals how tunneling significantly depends on the barrier parameters. The efficacy of the switching function in enforcing adiabaticity of the evolution is demonstrated. The effective mass, barrier width, and height emerge as important control parameters.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Physics and Chemistry of Solids - Volume 71, Issue 5, May 2010, Pages 745-751
Journal: Journal of Physics and Chemistry of Solids - Volume 71, Issue 5, May 2010, Pages 745-751
نویسندگان
Manas Ghosh, Subhasree Ghosh, S.P. Bhattacharyya,