کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1516710 1511585 2010 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Pressure-induced phase transition in defect Chalcopyrites HgAl2Se4 and CdAl2S4
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Pressure-induced phase transition in defect Chalcopyrites HgAl2Se4 and CdAl2S4
چکیده انگلیسی

Results of angle dispersive X-ray diffraction (ADXRD) measurements on the defect chalcopyrites (DCP), HgAl2Se4 and CdAl2S4 up to 22.2 and 34 GPa, respectively, are reported. The ambient tetragonal phase is retained in HgAl2Se4 and CdAl2S4 up to 13 and 9 GPa respectively. The values of the bulk modulus estimated from the Equation of State is 66(1.5) and 44.6(1) GPa for HgAl2Se4 and CdAl2S4 in the chalcopyrite phase. At higher pressure a disordered rock-salt structure and on pressure release a disordered zinc blende structure with broad X-ray diffraction lines are observed as is the case for several defect chalcopyrites.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Physics and Chemistry of Solids - Volume 71, Issue 5, May 2010, Pages 832–835
نویسندگان
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