کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1516762 | 1511562 | 2012 | 5 صفحه PDF | دانلود رایگان |

Thin ZnSe layers were deposited on ZnO nanowires by a novel successive ionic layer adsorption and reaction technique in order to solve recombination problems in ZnO nanowire-based dye-sensitized solar cells (DSSCs). Cell efficiency increased from 0.1 to 1.3–1.4% with the deposition of a 9- to13-nm-thick ZnSe shell on ZnO nanowires due to a large increase in JSC. The dramatic increase in JSC and cell efficiency is due to the facilitation of electron transfer related to ambipolar diffusion by the formation of a type II band alignment and the suppression of recombination in the presence of the ZnSe shell.
► ZnSe layers formation on ZnO nanowires to fabricate dye-sensitized solar cell.
► Increase in cell efficiency with the deposition of thin ZnSe shell on ZnO nanowires.
► Result of type II band alignment and suppression of recombination.
Journal: Journal of Physics and Chemistry of Solids - Volume 73, Issue 4, April 2012, Pages 535–539