کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1516973 | 1511575 | 2011 | 4 صفحه PDF | دانلود رایگان |

Ten layers of self-assembled InMnAs quantum dots with InGaAs barrier were grown on high resistivity (1 0 0) p-type GaAs substrates by molecular beam epitaxy (MBE). The presence of ferromagnetic structure was confirmed in the InMnAs diluted magnetic quantum dots. The ten layers of self-assembled InMnAs quantum dots were found to be semiconducting, and have ferromagnetic ordering with a Curie temperature, TC=80 K. It is likely that the ferromagnetic exchange coupling of sample with TC=80 K is hole mediated resulting in Mn substituting In and is due to the bound magnetic polarons co-existing in the system. PL emission spectra of InMnAs samples grown at temperature of 275, 260 and 240 °C show that the interband transition peak centered at 1.31 eV coming from the InMnAs quantum dot blueshifts because of the strong confinement effects with increasing growth temperature.
Research highlights
► Ten layers of self-assembled InMnAs quantum dots with InGaAs barrier were grown by MBE.
► Ferromagnetic exchange couplings of InMnAs quantum dots with a Curie temperature of 80 K.
► Interband transition peak centered at 1.31 eV coming from the InMnAs quantum dot.
Journal: Journal of Physics and Chemistry of Solids - Volume 72, Issue 3, March 2011, Pages 181–184