Thermally stimulated current measurements in undoped Ga3InSe4 single crystals

► Trap levels in Ga3InSe4 crystals were studied by the thermally stimulated currents technique. ► Evidence is established for one hole trapping center with activation energy of 62 meV. ► The capture cross-section of the trap was determined as 1.0×10−25 cm2. ► The concentration of trap was found to be 1.4×1017 cm−3.