Photocatalytic O2 evolution performances of Cd1+xIn2−2xSnxO4 (x=0.1, 0.3, 0.5, 0.7, 1.0) conducting oxides

The conducting oxides solid solutions of Cd1+xIn2−2xSnxO4 (x=0.1, 0.3, 0.5, 0.7, 1.0) were prepared via a solid state reaction method. The band gaps were estimated to be 2.4 eV for x=1.0, 2.5 eV for x=0.7, 2.6 eV for x=0.5, 2.7 eV for x=0.3 and 2.8 eV for x=0.1. Oxygen could be evolved over Cd2SnO4 under the irradiation of Xe-lamp or even visible light (λ>420 nm), while the others could only work in the UV-light range. Raman showed the cation distribution in Cd2SnO4 is ordered, while that in the others is disordered. The cations distribution was proposed to be the cause of the difference in photocatalytic O2-evolution activities.