کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1517480 1511587 2010 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
High-quality oriented ZnO films grown by sol–gel process assisted with ZnO seed layer
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
High-quality oriented ZnO films grown by sol–gel process assisted with ZnO seed layer
چکیده انگلیسی

High-quality oriented ZnO films were prepared on silicon and quartz glass by sol–gel, assisted with a ZnO seed layer. The effects of the seed layer on the orientation, morphology and optical properties of ZnO films were investigated. Results show that the seed layer can effectively induce the growth of high-quality oriented ZnO films on two substrates, and the effectiveness of the seed layer strongly depends on preparation conditions, i.e., the spin-coating layer number and the preheating temperature. ZnO films with five layers on the seed layer preheated at 500 °C exhibit the single (0 0 2) orientation, which is much stronger than that on the flat substrate. Additionally, ZnO films on the seed layer show a denser internal structure and higher optical quality than that on the flat substrate. At ten layers, however, ZnO films on the seed layer show the multiple-orientation, which is similar to that on the flat substrate. Finally, the physical mechanism underlying the growth behavior of ZnO films assisted with the seed layer was discussed.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Physics and Chemistry of Solids - Volume 71, Issue 3, March 2010, Pages 364–369
نویسندگان
,