کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1517500 | 1645414 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of seed layer on the growth of well-aligned ZnO nanowires
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
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چکیده انگلیسی
We demonstrate that vertical well-aligned crystalline ZnO nanowire arrays were grown on ZnO/glass substrates by a low-temperature solution method. Different thicknesses of ZnO seed layers on glass substrates were prepared by radio-frequency sputtering. In this work it was found that the morphology of ZnO nanowires strongly depends on the thickness of ZnO seed layers. The average diameter of nanowires is increased from 50 to 130 nm and the nanowire density is decreased from 110 to 60 μm−2 while the seed layer thickness is varied from 20 to 1000 nm. The improved control of the morphology of ZnO nanowire arrays may lead to an enhanced carrier collection of hybrid polymer photovoltaic devices based on ZnO.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Physics and Chemistry of Solids - Volume 70, Issue 10, October 2009, Pages 1359–1362
Journal: Journal of Physics and Chemistry of Solids - Volume 70, Issue 10, October 2009, Pages 1359–1362
نویسندگان
Liang-Wen Ji, Shi-Ming Peng, Jun-Sheng Wu, Wei-Shun Shih, Cheng-Zhi Wu, I-Tseng Tang,