کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1517794 | 1511596 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The effects of thermal annealing on the obliquely deposited Ag-Ge-S thin films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: The effects of thermal annealing on the obliquely deposited Ag-Ge-S thin films The effects of thermal annealing on the obliquely deposited Ag-Ge-S thin films](/preview/png/1517794.png)
چکیده انگلیسی
Obliquely deposited thin films of ternary Ag-Ge-S glasses are characterized in this work. Thin films are fabricated in a vacuum thermal evaporator at different evaporation angles and examined by Raman spectroscopy. The Raman mode frequency of GeS4 corner-sharing (CS) structure of the as-deposited films display a red-shift as a function of Ag content due to reduced global connectivity, and therefore decreased network stress. Film thickness of normally deposited thin films is significantly less when compared against obliquely deposited ones. Sulfur-ring (S8) modes are observed in thin films but not in corresponding bulk material. Thermal annealing of thin films results in the disappearance of Sulfur-ring (S8) modes, while the temperature required for this phenomenon is deposition angle dependent. Thickness of the obliquely deposited films shrinks significantly after thermal annealing, which indicates a collapse of the micro-column structure introduced by oblique deposition.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Physics and Chemistry of Solids - Volume 70, Issue 6, June 2009, Pages 978-981
Journal: Journal of Physics and Chemistry of Solids - Volume 70, Issue 6, June 2009, Pages 978-981
نویسندگان
F. Wang, W.P. Dunn, M. Jain, C. De Leo, N. Vicker, R. Savage, X. Jin, S. Mamedov, P. Boolchand,