کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1518132 | 1511601 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Low-energy electronic state of the structural modulation-free Bi2Sr2CuO6+δ studied by the scanning tunneling microscopy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Low-energy electronic state of the structural modulation-free Bi2Sr2CuO6+δ studied by the scanning tunneling microscopy Low-energy electronic state of the structural modulation-free Bi2Sr2CuO6+δ studied by the scanning tunneling microscopy](/preview/png/1518132.png)
چکیده انگلیسی
We report scanning tunneling microscopy (STM) studies on the structural modulation-free Bi2Sr2CuO6+δ in which Bi atoms are partially substituted by Pb atoms. Optimally doped sample with the superconducting transition temperature Tc=22K shows short atom-strings at a bias-voltage of 5 mV. Some strings are bundled and aligned along the orthogonal oriented two Cu-O-Cu directions randomly. Atom-strings are also observed in the overdoped sample (Tc=7K), while they are hardly seen in the heavily overdoped sample (Tc=4.5K). It is found that the disturbance from overdoped holes reduces the number of atom-strings and obscures every atom-string. These results indicate that the CuO2 plane possesses not only the two-dimensional electronic correlation caused by the two-dimensionality but also short-range one-dimensional one.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Physics and Chemistry of Solids - Volume 69, Issue 12, December 2008, Pages 3022-3026
Journal: Journal of Physics and Chemistry of Solids - Volume 69, Issue 12, December 2008, Pages 3022-3026
نویسندگان
K. Kudo, T. Nishizaki, N. Okumura, N. Kobayashi,