کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1518137 1511601 2008 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Tunneling study through analysis of spatial variations of the pair potential in diffusive normal metal/insulator/high-Tc superconductor junctions
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Tunneling study through analysis of spatial variations of the pair potential in diffusive normal metal/insulator/high-Tc superconductor junctions
چکیده انگلیسی
We report how spatial variations of the pair potential with an anisotropic symmetry influence tunneling conductance spectra in diffusive normal metal/insulator/dx2-y2-wave superconductor (DN/I/DS) junctions. A zero-bias conductance peak (ZBCP) was observed for the (1 1 0)-oriented interface in Ag/SiO/Bi2Sr2CaCu2O8+δ (Bi-2212) planar junctions. The experimental ZBCP was analyzed by the circuit theory, which was improved by the introduction of spatial variations of the pair potential near the junction interface between a DN conductor and a DS electrode. Our experimental results are well explained by the extended circuit theory for DN/I/DS junctions.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Physics and Chemistry of Solids - Volume 69, Issue 12, December 2008, Pages 3042-3045
نویسندگان
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