کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1518284 1511609 2008 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Fabricated nano-disk InGaN/GaN multi-quantum well of the inverse hexagonal pyramids
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Fabricated nano-disk InGaN/GaN multi-quantum well of the inverse hexagonal pyramids
چکیده انگلیسی

Self-assembled inverted hexagonal pyramids with GaN:Mg and InGaN/GaN multi-quantum-well (MQW) structures were formed through photoelectrochemical wet etching. The formation mechanism of the inverted hexagonal pyramid consisted with a lateral etching process of the InGaN/GaN active layer, bottom-up etching process from N-face GaN direction, and anisotropic etching process. The photoluminescence (PL) intensity of GaN:Mg peak was enhanced in this inverted hexagonal pyramid caused by the quantum confinement effect of this nano-structure. These inverted hexagonal pyramids, consisting of the p-type GaN:Mg, nano-disk InGaN/GaN active layer, and n-type GaN:Si layer, are suitable for nano-scale optoelectronic devices.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Physics and Chemistry of Solids - Volume 69, Issues 2–3, February–March 2008, Pages 589–592
نویسندگان
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