کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1518290 1511609 2008 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
High-K dielectric PZN-based materials prepared by microwave sintering for reduction of defects
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
High-K dielectric PZN-based materials prepared by microwave sintering for reduction of defects
چکیده انگلیسی
The high-K dielectric ceramics of x(0.94Pb(Zn1/3Nb2/3)O3+0.06BaTiO3)+(1−x)PbZryTi1−yO3 (PBZNZT) have been prepared by conventional sintering (CS) and microwave sintering (MS). The dielectric properties were improved by MS process when the sintering temperature was increased. The dielectric constants of MS samples increase with the sintering temperature due to the larger grain size. The MS process not only can enhance the homogeneity but also suppress the segregation of PbO and ZnO to grain boundaries. This leads to the substantial improvement on the dielectric properties of PBZNZT samples. The maximum dielectric constant of MS samples sintered at 1100 °C for 2 h is about 25,200, which is markedly greater than that of CS samples.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Physics and Chemistry of Solids - Volume 69, Issues 2–3, February–March 2008, Pages 611-615
نویسندگان
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