کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1518375 | 1511617 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Memory effect in MIS structures with amorphous silicon nanoparticles embedded in ultra thin SiOxSiOx matrix
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Memory effect in MIS structures with amorphous silicon nanoparticles embedded in ultra thin SiOxSiOx matrix Memory effect in MIS structures with amorphous silicon nanoparticles embedded in ultra thin SiOxSiOx matrix](/preview/png/1518375.png)
چکیده انگلیسی
Metal/SiO2SiO2/a-Si-SiOxSiOx/c-Si structures containing amorphous silicon nanoparticles (a-Si NPs) embedded in ultra thin SiOxSiOx matrix are fabricated by thermal evaporation of SiOxSiOx and sputtering of SiO2SiO2 layers followed by thermal annealing at 700∘C. A memory effect, due to charging of a-Si NPs in SiOxSiOx, is observed. The processes of NP charging and discharging are accomplished by applying pulses with alternative polarities. The observed shift of the flat band voltage of the high-frequency C–V curve caused by a voltage pulse of -15V having duration of 1 s is more than 3 V. In addition, the structures show good retention characteristics which make them promising for application in non-volatile memory devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Physics and Chemistry of Solids - Volume 68, Issues 5–6, May–June 2007, Pages 725–728
Journal: Journal of Physics and Chemistry of Solids - Volume 68, Issues 5–6, May–June 2007, Pages 725–728
نویسندگان
D. Nesheva, N. Nedev, E. Manolov, I. Bineva, H. Hofmeister,