کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1518414 1511617 2007 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
On the mechanism of gray scale patterning of Ag-containing As2S3 thin films
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
On the mechanism of gray scale patterning of Ag-containing As2S3 thin films
چکیده انگلیسی

We demonstrate an application of photo-induced silver diffusion into chalcogenide glass thin film for gray scale lithography. The gray scale chalcogenide glass masking layer generated in the present experiments was dry etched using reactive ion etching. The etching rate increases almost linearly with the total dose of absorbed light, thus forming the basis of gray scale lithography. Chemical composition as well as electronic structure on the surface of chalcogenide glassy film has been determined by high-resolution X-ray photoelectron spectroscopy (XPS) of the film at different stages of the patterning process. Influence of thermal annealing of chalcogenide film before Ag deposition has been investigated using scanning electron microscopy (SEM) and XPS techniques. It is observed that thermal annealing of the chalcogenide film slows the process of silver diffusion during the proposed processing procedure. A mechanism is proposed to explain the stages of gray scale lithography based on chalcogenide glass photoresists.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Physics and Chemistry of Solids - Volume 68, Issues 5–6, May–June 2007, Pages 920–925
نویسندگان
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