X-ray Raman scattering at the Si LII,III-edge of bulk amorphous SiO

X-ray Raman spectra of bulk amorphous SiO have been measured at energy losses around the Si LII,III-edges for different momentum transfers at beamline ID16 of ESRF. The spectra are compared with measurements of the LII,III-edges of Si powder and with results of first-principles calculations for Si and α-quartz SiO2. Indications of sub-oxidic contributions to the LII,III-edges are found in the experiment and discussed with respect to the model of interface clusters mixture in bulk amorphous SiO.