کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1518536 | 1511611 | 2007 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Pressure effect on the optical properties of the filled tetrahedral semiconductors LiZnX (X=N,P,andAs)
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Pressure effect on the optical properties of the filled tetrahedral semiconductors LiZnX (X=N,P,andAs) Pressure effect on the optical properties of the filled tetrahedral semiconductors LiZnX (X=N,P,andAs)](/preview/png/1518536.png)
چکیده انگلیسی
First principles calculations, by means of the full potential linearized augmented plane wave method within the local density approximation, were carried out for the pressure dependence of the electronic and optical properties of the filled tetrahedral compounds LiZnN, LiZnP and LiZnAs. The first order band gap pressure coefficient aÎ-Î in LiZnN is larger than the corresponding one in GaN, while it is smaller in LiZnP and LiZnAs compared to the one in GaP and GaAs, respectively. The aÎ-L value in the ternaries is greater than the corresponding one in the binaries. The structures in the optical spectra shift towards higher energies when the pressure increases. The static dielectric function decreases with pressure.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Physics and Chemistry of Solids - Volume 68, Issue 12, December 2007, Pages 2286-2292
Journal: Journal of Physics and Chemistry of Solids - Volume 68, Issue 12, December 2007, Pages 2286-2292
نویسندگان
L. Kalarasse, A. Mellouki, B. Bennecer, F. Kalarasse,