کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1518603 | 1511631 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Structural, electrical and optical properties of AgInS2 thin films grown by thermal evaporation method
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Structural, electrical and optical properties of AgInS2 thin films grown by thermal evaporation method Structural, electrical and optical properties of AgInS2 thin films grown by thermal evaporation method](/preview/png/1518603.png)
چکیده انگلیسی
Structural electrical and optical properties of AgInS2 (AIS) thin films grown by the single-source thermal evaporation method were studied. The X-ray diffraction spectra indicated that the AIS single phase was successful grown by annealing above 400 °C in air. The AIS grain sizes became large with increasing the annealing temperatures. All polycrystalline AIS thin films were sulfur-poor from the electron probe microanalysis and indicated n-type conduction by the Van der Pauw technique. It was deduced that the sulfur vacancies were dominant in the films and enhanced n-type conduction.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Physics and Chemistry of Solids - Volume 66, Issue 11, November 2005, Pages 1858–1861
Journal: Journal of Physics and Chemistry of Solids - Volume 66, Issue 11, November 2005, Pages 1858–1861
نویسندگان
Y. Akaki, S. Kurihara, M. Shirahama, K. Tsurugida, S. Seto, T. Kakeno, K. Yoshino,