کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1518777 | 1511619 | 2007 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Resistance anomaly and structural disorder in NiSi2 under high pressure
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Results of X-ray diffraction, electrical resistance, thermoelectric power measurements and electronic band structure calculations on NiSi2 under high pressure are reported. The thermoelectric power (TEP) changes sign near 0.5 GPa (from +30 to â20 μV/K). As the pressure is increased, the value of TEP increases further in magnitude and near 7 GPa it becomes â50 μV/K. The pressure vs. resistance curve measured up to 30 GPa using diamond anvil (DAC)-based technique exhibits a broad hump near 12 GPa and exhibits hysteresis on pressure release. The ADXRD patterns up to 42 GPa show a gradual irreversible loss of long-range order in NiSi2 with the diffraction lines progressively broadening under pressure. The FWHM of the diffraction lines show a rapid increase in the half-widths close to 0.5 GPa and also near 12 GPa. The computed band structure at a compression (without any disorder) corresponding to 12 GPa, exhibits an electronic topological transition (ETT). The rapid increase in disorder above 12 GPa implies that the ETT may be facilitating the structural disorder. It is suggested that the pressure drives the material through a region of entropic and energetic barriers and induces disorder in the material.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Physics and Chemistry of Solids - Volume 68, Issue 3, March 2007, Pages 367-372
Journal: Journal of Physics and Chemistry of Solids - Volume 68, Issue 3, March 2007, Pages 367-372
نویسندگان
Alka B. Garg, V. Vijayakumar, A.K. Verma, R.S. Rao, B.K. Godwal,