کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1518790 1511619 2007 13 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Atomistic study of the pressure-induced phase-transition mechanism in GaAs by Möbius inversion potentials
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Atomistic study of the pressure-induced phase-transition mechanism in GaAs by Möbius inversion potentials
چکیده انگلیسی

In this work, the phase transition from zincblende (B3) to rocksalt (B1) structure in bulk GaAs is investigated by using Möbius inversion potentials. A Cm transition path is proposed from the molecular static simulation results, even though it is different from previously proposed transition paths Imm2, R3m and P32. The present Cm path is quite close to the previously suggested Imm2 path according to the crystal cell geometries and activation enthalpies. By comparison, the activation enthalpies along the R3m and P32 path are relative high. Therefore, the Imm2 mechanism, as a simplified model of the Cm one, is suggested to describe the microscopic process of the B3–B1 phase transition of GaAs. In this way, we investigate the changes of the system features during the transition process characterized by Imm2 mechanism and obtain a concise picture for the common B3–B1 transition. All the calculated results are compared to relevant experimental observations and other calculations.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Physics and Chemistry of Solids - Volume 68, Issue 3, March 2007, Pages 445–457
نویسندگان
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