Electrical and optical properties of silver doped indium oxide thin films prepared by reactive DC magnetron sputtering

Silver doped indium oxide (In2−x Agx O3−y) thin films have been prepared on glass and silicon substrates at room temperature (300 K) by reactive DC magnetron sputtering technique using an alloy target of pure indium and silver (80: 20 atomic %. The magnetron power (and hence the metal atom sputter flux) is varied in the range 40–80 W. The energy dispersive analysis of X-ray (EDAX) results show that the silver content in the film decreases with increasing magnetron power. The grain size of these films is of the order of 100 nm. The resistivity of these films is in the range 10−2–10−3 Ω cm. The work function of the silver-indium oxide films (by Kelvin Probe) are in the range: 4.64–4.55 eV. The refractive index of these films (at 632.8 nm) varies in the range: 1.141–1.195. The optical band gap of indium oxide (3.75 eV) shrinks with silver doping. Calculations of the partial ionic charge (by Sanderson's theory) show that silver doping in indium oxide thin films enhance the ionicity.