کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1519081 1511620 2007 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Oxygen vacancy doping effect on the electrical and magnetic behavior of Ba5−xLaxNb4−xTixO15
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Oxygen vacancy doping effect on the electrical and magnetic behavior of Ba5−xLaxNb4−xTixO15
چکیده انگلیسی

We report electric and magnetic properties of oxygen deficient Ba5−xLaxNb4−xTixO15−δ phases, which have been prepared by solid-state reaction method followed by a controlled reduction process under hydrogen atmosphere. The extra electrons added by the formation of the oxygen vacancies (δ) introduce localized spins and the magnetic susceptibility can be described by a temperature-independent contribution and a Curie–Weiss term associated to the Ti3+ ion formation. Besides, the experimental resistivity (ρ  ) data of these four reduced compounds are well described in a wide temperature range with the equation ρ≈ATexp(B/T)-1/4, which suggests the presence of small polarons in the system. Although, all samples present electrical insulating behavior, the electrical resistivity decreases four orders of magnitude for intermediate x values. We interpreted this fact as a consequence of the mix between the localized bands of the Nb and Ti ions, which favors the promotion of carriers due to reduction of the band gap.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Physics and Chemistry of Solids - Volume 68, Issue 2, February 2007, Pages 124–130
نویسندگان
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