کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1519123 1511621 2007 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
In-situ current–voltage characteristics of the n+-type GaAs substrate in HF:Et-OH electrolyte
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
In-situ current–voltage characteristics of the n+-type GaAs substrate in HF:Et-OH electrolyte
چکیده انگلیسی

In-situ characterisation of the n+-GaAs/HF:Et-OH interface is studied by current–voltage, J(V). The experimental current-potential exhibits the presence of three potential regions, which are attributed to different reaction mechanisms between HF and n+-type GaAs surface. Depending on HF concentration a current peak appears in the J(V) characteristics. Scanning electron microscopy (SEM) images of samples at different point of the J(V) characteristic exhibits different surface morphologies which depend strongly on the electrochemical anodization conditions.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Physics and Chemistry of Solids - Volume 68, Issue 1, January 2007, Pages 36–40
نویسندگان
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