Photoluminescence of Ge-doped GaAs grown by vapor-phase epitaxy

Ge-doped GaAs grown by vapor phase epitaxy was investigated by photoluminescence measurements between 1.8° and 20.3°K. Two bands caused by Ge-doping are found at about 1.476 and 1.480 eV. The bands are interpreted in terms of donor-acceptor recombination and free electron-acceptor transition. The binding energy of the acceptor is 42 ±1 meV.