کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1520474 | 1511782 | 2016 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
WS2 nanotube formation by sulphurization: Effect of precursor tungsten film thickness and stress
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Transition metal dichalcogenides can exhibit as 2-dimensional layers, 1-dimensional nanotubes or 0-dimensional quantum dot structures. In general, dichalcogenide nanotubes are grown under stringent conditions, using high growth temperatures with tedious processes. Here, we report the controlled formation of tungsten disulphide (WS2) nanostructures by manipulating the precursor film thickness, followed by a direct sulphurization process. WS2 nanotubes were formed by ultra-thin tungsten precursor films, while particle-like WS2 were obtained from thicker tungsten films under identical sulphurization conditions. To elucidate the origin of WS2 nanostructure formation, micron-sized tungsten film tracks were prepared, and such patterned films were found to suppress the growth of WS2 nanotubes. We attribute the suppression of nanotube formation to the relieving of film stress in patterned precursor films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Chemistry and Physics - Volume 181, 15 September 2016, Pages 352-358
Journal: Materials Chemistry and Physics - Volume 181, 15 September 2016, Pages 352-358
نویسندگان
Sheung Mei Ng, Hon Fai Wong, Wang Cheung Wong, Choon Kiat Tan, Sin Yuk Choi, Chee Leung Mak, Gui Jun Li, Qing Chen Dong, Chi Wah Leung,