Structural, electrical and dielectric properties of CNT doped SeTe glassy alloys

This paper describes the preparation of multi-walled carbon nanotube chalcogenide glasses alloys [(Se80Te20)100-x(CNT)x] (x = 2 and 10) by melt quenching technique and were characterized with XRD, SEM, Raman, electrical and dielectric measurements. An XRD measurement reveals the amorphous nature of the prepared samples. The SEM and Raman study confirm the presence of CNT in SeTe alloy. The diffused prime Raman bands (G and D) have been appeared for MWCNT/SeTe glassy alloy. The current versus voltage (IV) characteristics and DC conductivity measurement were carried out. The rapid increase in electrical conductivity by several order of magnitude from 10−10 Ω−1 cm−1 to 10−3 Ω−1 cm−1 for 2% and 10% MWCNT/SeTe chalcogenide semiconductor were observed. Such significant increase in electrical conductivity for CNT doped glassy alloy may be due highly conducting nature of CNT. The effect is explained on the basis of conductive path which create percolation network in MWCNT/SeTe glassy alloys. The dielectric parameters were studied in the temperature range of 300–370 K and in the frequency range of 500 Hz–1 MHz. Dielectric dispersion are observed and the results are explained on the basis of dipolar type of dielectric dispersion and DC conduction losses.