کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1521236 | 1511802 | 2015 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Structural, electrical and magnetic characterization of in-situ crystallized ZnO:Co thin films synthesized by reactive magnetron sputtering
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Zn1âxCoxO (0 < x < 0.146) conductive thin films have been deposited by reactive magnetron sputtering of metallic Zn and Co targets at high pressure and temperature. The structural properties have been investigated by using X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). It has been observed that all as-deposited films are crystallized in pure hcp ZnO structure and neither traces of metallic nor oxide Co-rich clusters were detected. The average grain size estimated from full width at half maximum of XRD results varied between 65 and 83 nm. XPS analyses exhibit that Co ions are successfully entered into ZnO lattice as Co+2. The electrical properties including conductivity, carrier density and carrier mobility were determined by Hall effect measurements in a temperature range from 300 K to 475 K. The conductivity of the films decreases from Ï300K = 2.2 Ã 104 to 2.3 Ã 10â1 Smâ1 as the Co content changes from 0 to 0.146. Magnetic measurements reveal the absence of ferromagnetism even at 3 K and a paramagnetic Curie-Weiss behavior associated to magnetic clusters.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Chemistry and Physics - Volume 161, 1 July 2015, Pages 26-34
Journal: Materials Chemistry and Physics - Volume 161, 1 July 2015, Pages 26-34
نویسندگان
Soumia Lardjane, Mohammad Arab Pour Yazdi, Nicolas Martin, Christine Bellouard, Nour-eddine Fenineche, Andreas Schuler, Ghouti Merad, Alain Billard,