Transverse piezoelectric properties of {100} – Oriented PLZT[x/65/35] thin films

• Preferentially {100}-oriented thin films of PLZT[x/65/35]; x = 6,7,8 deposited by sol–gel spin-coating method.
• Evaluation of transverse piezoelectric coefficient, e31∗ of piezoelectric thin films by Cantilever method.
• Structure–Property correlation in PLZT thin films.

Preferentially {100}-oriented thin films of lead lanthanum zirconate titanate, (Pb1−xLax) (Zr0.65Ti0.35)1−x/4O3[PLZT(x/65/35)] with compositions near the morphotropic phase boundary (MPB) were prepared on silicon substrates (111)Pt/Ti/SiO2/Si by sol–gel spin coating technique. The structural, micro structural and electrical characteristics have been studied as a function of thin film composition. Crystalline orientation and microstructure of the thin films have been determined by X-ray diffraction, Scanning electron microscopy, respectively. The transverse piezoelectric coefficient, e31∗ of the PLZT thin films have been evaluated by tip deflection of unimorph cantilevers. The influence of thin film composition on e31∗ have been determined. PLZT (7/65/35) thin film exhibited the optimum dielectric and piezoelectric characteristics with a dielectric permittivity, εr = 917; dielectric loss, tan δ = 0.03 and average e31∗ = −4.2 C/m2.